Fermi Level of an Intrinsic Semiconductor. Given the expression... | Filo
Fermi Level of an Intrinsic Semiconductor. Given the expression... | Filo
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In n-type silicon, the Fermi energy level varies linearly with distance over a short range. At x=0, EF-EF i=0.4 eV and, at x=10^-3  cm, EF-EF i=0.15 eV .(a) Write the expression for the electron concentration over the distance. (b) If the electron diffusion coefficient is Dn=25  cm^2 / s, calculate the electron diffusion current density at (i) x=0 and (ii) x=5 ×10^-4  cm. | Numerade
In n-type silicon, the Fermi energy level varies linearly with distance over a short ra…
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Derive an expression for the Fermi energy level in intrinsic semiconductors in terms of the conduction band and the valence band. | Numerade
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SOLVED: In a Si sample, the Fermi level lies 0.365 eV below the intrinsic level. What is the conductivity type (enter n or p) and what is the majority carrier concentration?
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