Mar 30, 2018 · In this article we present a comparative XPS characterization of bare- and capped- zirconium nitride (ZrN) thin films deposited by plasma enhanced ALD (PEALD) as a case study to investigate whether post-growth ambient surface oxidation may explain the observed oxygen content in nitride ALD films.

Sep 1, 2003 · Zirconium nitride films are deposited onto borosilicate wafers by reactive magnetron sputtering. The films are analysed in situ by X-ray photoelectron spectroscopy (XPS). We have studied by XPS the effects of the nitrogen partial pressure (1–100%), the subtract temperature (ambient to 450 °C), and biasing (0–80 W) on the stoichiometry of ZrN films.

Sep 23, 2021 · The composition, structure, morphology, and corrosion resistance were studied by sum means of x-ray photoelectron spectroscopy (XPS), x-Ray diffraction (XRD), scanning electron microscopy...

Sep 21, 2023 · Here we demonstrate a practical surface enhanced Raman spectroscopy (SERS) substrate using zirconium nitride (ZrN) thin films grown by reactive gas-timing (RGT) rf magnetron sputtering.

Jan 18, 2023 · In this paper it has been demonstrated, using quantitative XPS, that stoichiometric, pure and homogeneous ZrN films have been grown at certain deposition conditions, optimized also via optional accessories mounted on the deposition apparatus.

Appearance of artifacts in the XPS spectra from moderately sputtered (dsput = 0.2 nm and 0.4 nm) capped-ZrN sample, provides an evidence to ion-bombardment induced modifications within analyzed sample.

Electrochemical oxidation of ZrN to ZrO2 proceeds via the formation of a mixed oxynitride/oxide layer, which then transforms into oxide at sufficiently positive potentials. Angle-resolved XPS measurements contribute to a better understanding of the in-depth layer structure.

Mar 30, 2018 · In this article we present a comparative XPS characterization of bare- and capped- zirconium nitride (ZrN) thin films deposited by plasma enhanced ALD (PEALD) as a case study to investigate whether post-growth ambient surface oxidation may explain the observed oxygen content in nitride ALD films.

In this article we compare x-ray photoelectron spectroscopy (XPS) measurements on bare- and capped- zirconium nitride (ZrN) films to investigate the effect of ambient sample oxidation on the detected bound O in the form of oxide ZrO<SUB>2</SUB> and/or oxynitride ZrO<SUB>x</SUB>N<SUB>y</SUB>.

Mar 25, 2008 · In the present study we investigated the gettering by zirconium in the zirconium nitride films prepared using the IBAD method as a function of a deposition parameter, the arrival rate ratio ARR (N/Zr).