The Unaxis 790 Series Plasma Enhanced Chemical Vapor Deposition (PECVD) system is used for the deposition of SiO2 & Silicon Nitride on Silicon and other wafers. The 790 Series systems are designed to provide plasma scientists with a flexible and cost effective platform for parallel plate processes.

Aug 22, 2005 · The Unaxis 790 Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor is used for depositing thin films of silicon-dioxide, silicon-nitride and amorphous silicon at temperatures from 100 to 350 C on silicon, quartz, plastic, and other substrates.

May 23, 2023 · This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD 4, N 2 , O 2 , and Ar for gas sources.

Mar 17, 2025 · ICP-PECVD (Unaxis VLR) 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool.

The Unaxis 790 Series Plasma Enhanced Chemical Vapor Deposition (PECVD) system is used for the deposition of SiO 2 and silicon nitride on a wide variety of substrates and wafers. Its lower temperature deposition allows for thermal management of devices when compared to higher temperature (LPCVD and thermal) deposition systems.

At Unaxis, a He dilution method has been developed as a simpler alternative technique to control the stress of PECVD SiNx. As illustrated in Figure 1, the addition of He to the standard gas mixture of SiH4, NH3, and N2, enables stress control from about 300 MPa, tensile through zero to about –300 MPa, compressive.

Unaxis 790 PECVD - Plasma Enhanced Chemical Vapor Deposition System. Deposition Capabilities: SiO2, SiN, SiC. The system is equipped with one 13.56 MHz 500 Watt RF power supply. Process Gases Available: 5%SiH4/He, N2O, NH3, N2, He, SF6, CH4. The system is capable of processing samples up to 8” diameter.

Unaxis 790 PECVD - Deposition Capabilities: SiO2, SiN, SiC. The system is equipped with one 13.56 MHz 500 Watt RF power supply. Process Gases Available: 5%SiH4/He, N2O, NH3, N2, He, SF6, CH4. The system is capable of processing samples up to 8” diameter. PECVD Byproducts – PECVD process may produce hazardous etch by products.

100 oC (ICP) 250 oC (ICP) 250 oC (PECVD) Refractive Index 1.47 1.49 1.46 Deposition Rate (nm/min.) 33.6 31.9 ~40 Buffered HF Etch Rate (nm/min.) 242 196 ~712 Stress (~20nm thick SiO2 Film on a Si Wafer) (MPa) -332 -275 −307 SiO2 Films, Grown using Unaxis ICP Tool (PM3) as well as PECVD Tool, Characterizations

Unaxis PECVD is a Plasma-Enhanced Chemical Vapor Deposition (PECVD) equipment for deposition of high quality semiconductor and dielectric thin films. Specification: SiO2, Si3N4, a-Si. Huge platen size holding up to 4 4" wafers.