Jun 29, 2022 · Our results provide pathfinding of high density, integration capability, low programing voltage (∼2 V), multi-functionality between programmable read-only memory (PROM), and ReRAM co-existing for potential embedded memory applications.

Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.

A recent prototype from Micron [9] and HP’s Memristor crossbar project [13] are the best examples of industry efforts to lever-age latency-optimized ReRAM for main memory. ReRAM has demonstrated superior endurance (> 1010 [20, 22]), sig-nificantly alleviating the wear-out problem in …

Mar 16, 2023 · ReRAM is a fast non-volatile storage-class memory relying on the formation of electrically conducting oxygen vacancy filaments through an otherwise insulating medium.

Jan 25, 2023 · In this work, an engineered submicrometer-scale bilayer stacking in via-type one-time programmable (OTP) memory and self-rectified resistive switching memory [resistive random access memory (ReRAM)] is demonstrated.

RRAM, also known as resistive random access memory or ReRAM, is a form of non-volatile storage that operates by changing the resistance of a specially formulated solid dielectric material.

One promising can-didate is a variation of Resistive Random-Access Memory (ReRAM) which implements the memory bit-cells on Back-End-of-Line (BEOL) layers. This allows for fabrication of the processor logic and ReRAM main-memory to be imple-mented on the same chip.

Resistive random-access memory (ReRAM) is widely hailed as the most promising technology in the race to develop new, more scalable, high capacity, high performance and reliable storage solutions.

One of the most promis-ing applications is Resistive Random Access Memory (ReRAM), consist-ing of the functional-oxide layer sandwiched by metal electrodes, namely Metal/Oxide/Metal (MOM) structure (Fig. 1). Why is ReRAM the up-and-coming candidate in …

CrossBar High-Density ReRAM technology can be stacked in 3D, delivering multiple terabytes of storage on a single chip. Its simplicity, stackability and CMOS compatibility enable logic and memory to be integrated onto a single chip at the latest technology node (FIGURE 2).