Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.

Apr 22, 2020 · In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed.

Mar 9, 2023 · Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks.

ReRAM cells, which capitalize on the resistive switching properties of materials, offer a simple structure that can be scaled down to very small dimensions, paving the way for higher density memory modules.

Resistive Random-Access Memory (ReRAM) represents a significant leap forward in memory technology. With its high speed, low power consumption, and non-volatility, ReRAM has the potential to address many of the limitations of traditional memory solutions.

In this paper, we present a comprehensive study of ReRAM-based memory systems. ReRAM’s high density comes from its unique crossbar architecture where some peripheral circuits are laid below multiple layers of ReRAM cells. A crossbar ar-chitecture introduces special constraints on operating voltages, write latency, and array size.

Jun 1, 2016 · Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive in achieving high-density and low-cost memory and will be required in future. In this chapter, MLC storage and resistance variability and reliability of …

RRAM, also known as resistive random access memory or ReRAM, is a form of non-volatile storage that operates by changing the resistance of a specially formulated solid dielectric material.

Resistive random-access memory (ReRAM) is widely hailed as the most promising technology in the race to develop new, more scalable, high capacity, high performance and reliable storage solutions.

ReRAM operates by exploiting the resistance switching phenomenon in certain materials, typically metal oxides. The basic structure of a ReRAM cell consists of a metal-insulator-metal (MIM) stack, where the insulator layer is sandwiched between two metal electrodes.