薄膜沉积作为半导体晶圆加工过程中的关键工艺步骤之一，包含物理气相沉积（PVD）和化学气相沉积（CVD）等不同方法，涉及真空、蒸发、高温、等离子体、化学反应等多种物理现象，且相互之间存在很强的影响。 COMSOL 多物理场仿真能够帮助工程师预测不同的工况条件和工艺参数下薄膜生长的均匀性与质量，优化设计方案，提高产品性能。 观看本视频，了解 COMSOL 多物理场仿真软件在 PVD/CVD 工艺模拟中的应用及相关功能。 视频中还包含了案例演示，让您直观 …

Jan 1, 2022 · A Large-area capacitively coupled PECVD discharge model is established based on COMSOL Multiphysics. We demonstrated the edge effect impact on plasma distributions in PECVD. RF voltage amplitude, chamber pressure, electrode gap, and lower electrode length influenced plasma uniformity.

Chipmakers widely use the plasma-enhanced chemical vapour deposition (PECVD) technique for depositing thin dielectric or conducting films on wafers. The primary objective for a deposition process is to have a good flow and species uniformity on the wafer.

Dec 15, 2023 · We investigate a hollow-cathode plasma system operating in the mixture of O 2 and TMDSO using physics- and chemistry-based numerical simulation. Two simulation strategies relevant for hollow-cathode PECVD are developed and cross-correlated – a global plasma model and a 2D plasma model.

Apr 15, 2019 · The aim of the present work is to understand the carbon deposition during graphene growth in plasma enhanced chemical vapor deposition system containing Ar/C 2 H 2 /H 2 gas mixture and to optimize the process parameters for the enhanced growth of graphene.

COMSOL Multiphysics 5.2a is used to model a two-dimensional PECVD model of plasma of complex Ar/CH 4 /C 2 H 2 /H 2 gas mixtures at low-pressure of 20mTorr and low temperature of 300K to simulate a practical PECVD system and calculate the various losses in the system and ultimately calculate the overall efficiency of PECVD system. 2.1 Geometry

using pulsed plasma enhanced chemical vapor deposition (PECVD). Pulsed PECVD has been developed as a high throughput alternative to atomic layer deposition (ALD) to deliver self-limiting growth of thin films. The goal of this thesis is to extend the application of pulsed PECVD to fabricate asymmetric nanopores.

The plasma enhanced chemical vapor deposition technology (PECVD) is one of the most important deposition techniques for the amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon thin film and solar cell fabrication. The deposition process is based on the surface reactions at the interface between the substrate and the reactive plasma phase.

We investigated composition, spatial distributions and plasma parameters of the plasma enhanced chemical vapor deposition (PECVD) process in mixture of Ar + H2 + C2H6 + dopant mixture, where either tetramethylsilane (TMS) - Si(CH3)4 or trisilylamine (TSA) - (SiH3)3N were introduced as silicon based precursors.

Mar 1, 2020 · This paper builds a physical model by using the finite element method on COMSOL simulation platform to simulate the in-line PECVD process. The in-line PECVD simulation model couples the flow field, thermal field, chemical reaction …