Apr 1, 2003 · DC current gain, β dc, vs. base–emitter voltage for the InAs BJT (control), and InAsP/InAs HBT structures. Improvement in gain of the HBT over the BJT is achieved by the …

Oct 1, 2015 · The second type of HBT is called double hetero junction transistor (DHBT) which has hetero junctions at both E–B and C–B interfaces. In SHBTs the emitter region has a wide …

Nov 24, 2021 · We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic …

imaging, photodiode arrays, HBT and HEMT are available in wavelengths up to 2.6 μm. Wafer sizes range from 2-4” and custom wafer growth is available by contacting our epitaxial …

Index Terms—Heterojunction bipolar transistor (HBT), lattice matched, metamorphic growth. I. INTRODUCTION I nP–based double heterojunction bipolar transistors (DHBTs) have been …

The common emitter current gain of a control BJT device was measured at β=110, and the HBT device, of identical doping structure achieved β=180. Two advances in InAs-based bipolar …

May 1, 2002 · An InP-based integrated HBT amplifier with PNP active load was demonstrated for the first time using complementary HBT technology (CRBT).

Apr 28, 2002 · Initial results from InAsP/InAs HBTs grown on InAs and transferred to sapphire substrates show comparable performance to the well established InGaAs/InAlAs HBT.

Apr 1, 2003 · In addition to metamorphic InAs BJT devices, HBTs, using InAsP for the wide-band gap emitter, are reported. Traditional HBT design stipulates that the emitter be a direct gap, …

InP HBTs offer high radio frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin film wiring permits the realization …