Apr 1, 2021 · The as-grown 2.0 μm-thick Ge film show high quality with a full-width at half-maximums for Ge(004) of 110 arcsec and very smooth surface with a root-mean-square …

industrial X-ray film systems. G is a measure of the signal gain factor and σD indicates the noise, so that G/σd repr. nnual audit at the Agfa plant. The results are recorded in .

Apr 15, 2021 · In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by …

Sep 20, 2013 · The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD) of ∼10 7 /cm 2 and the root-mean …

Mar 1, 2016 · An epitaxial Ge film was grown on a Si (001) substrate via a two-step process through the molecular beam epitaxy technique. The strain status of non-annealed and …

Dec 12, 2023 · This approach provides an inexpensive and convenient way for accurate Ge substrate thinning in applications such as multijunction solar cells and sub-10 μm-thick Ge thin …

Nov 13, 2018 · In this work, we present a new approach of creating tensilely strained intrinsic Ge films on Si substrates through physical vapor deposition of solid Ge sources. Compared to the …

Mar 26, 2020 · Germanium on silicon has the potential to enable growth of high quality group IV semiconductors for the field of silicon photonics by being used as virtual buffers. In addition Ge …

Sep 1, 2022 · Direct deposition of high-quality Ge film on Si substrate suitable for fabricating Ge/Si photodiodes was achieved by using plasma-enhanced chemical vapor deposition …

May 20, 2016 · We investigate the microstructure and optical properties of Ge films on Si substrates prepared at low temperature by DC magnetron sputtering and the effect of in situ …