Apr 27, 2016 · The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process.

Feb 2, 2017 · In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to...

Apr 10, 2019 · In this paper, we fabricate a CoFeB/MgO-based MTJ directly on an organic flexible substrate without resorting to a transfer-and-print method. After high temperature post annealing process at 350 °C, the MTJ shows the TMR ratio of ∼100%.

Apr 27, 2018 · Thereby, conventionally fabricated MTJ devices are transformed into flexible ones by thinning down the silicon wafer from 500 μm to 5 μm. This process leads to thin, bendable silicon devices, while maintaining their original performance.

Mar 12, 2016 · Here, we present flexible MgO barrier magnetic tunnel junction (MTJ) devices fabricated using a transfer printing process, which exhibit reliable and stable operation under substantial deformation of the device substrates.

Jul 25, 2018 · The flexible MTJs are highly reliable and resistive to mechanical stress. Bending of the MTJ stacks with a diameter as small as 500 µm is possible without compromising their performance and an endurance of over 1000 cycles without fatigue has been demonstrated.

Apr 27, 2016 · The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process.

This flexible MTJ was fully functional and exhibited a TMR ratio of up to 190% at bending radii as small as 5 mm with excellent stability [92]. Selma et al. improved by using a (001) orientated...

The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process.

Feb 2, 2017 · The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates.