In this review paper, we have studied about the parasitic capacitances and low power FinFET applications. The challenges of the FinFET technologies have also addressed to explore the research discontinuity.

The paper introduces the formation, development, and future exploration of FinFET. It introduces the invention history, the formation and working principle of conventional bulk FinFET with three gates.

Semiconductor devices reviewed in this paper are FinFET, Gate All Around (GAA), and Tunnel FET (TFET). Other related FETs like hetrojunction dopingless TFET, and Gallium Nitride FET (GaN-FET) are also reviewed. This paper also discusses different performance parameters of …

Jul 1, 2022 · In recent technology, the demand for 3D multiple-gate MOSFETs such as FinFETs increase. In this paper, FinFETs are explored and reviewed. The scaling of planar MOSFET below 32nm technology...

In this paper, we reviewed the history, classifications, challenges, materials, and novel ideas of FinFET devices, which are promising candidates for the future of nanoscale CMOS technology. We discussed the advantages of FinFETs over planar MOSFETs in terms of electrostatic control, power consumption, scalability, and performance.

Sep 13, 2021 · In recent technology, the demand for 3D multiple-gate MOSFETs such as FinFETs increase. In this paper, FinFETs are explored and reviewed. The scaling of planar MOSFET below 32nm technology increases the short channel effects (SCE).

May 14, 2022 · In short, FINFET devices display superior SCE’s behaviour have considerably lower switching times, and higher current density than MOSFET technology.

Sep 7, 2014 · In this paper, we review research on FinFETs from the bottommost device level to the topmost architecture level. We survey different types of FinFETs, various possible FinFET asymmetries and their impact, and novel logic-level and …

Fin-On MOSFET device downtime, de-vice speed and packing density are increased, power distribu-tion, power required, noise limit and area required for the transistor have been reduced along with DIBL, Velocity Saturation and Oxide Breakdown and Modeling Challenges.

FinFET technology faced two key barriers to their implementation in products: demanding process integration and its significant impact on layout and circuit design methodology. In this paper we focus on challenges and tradeoffs in both of these areas.