A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.

Abstract: After using strained silicon devices and high K metal gate devices for decades, design companies have shifted to 3D transistors i.e FinFET since 2011. FinFETs based FPGA products, processors for laptop/desktop and mobile phone, have been manufactured in mass scale.

Feb 27, 2024 · FINFET stands for Fin Field Effect Transistor it belongs to the FET family and it is a type of Multi gate MOSFET that is used in place of a common MOSFET. Unlike regular FETs which are planar in shape, FINFET is non-planar having a 3D structure.

FinFETs can be categorized into two primary types based on their number of terminals: Short Gate (SG) FinFETs, with three terminals, and Independent Gate (IG) FinFETs, featuring four terminals. The key distinction between these two categories lies in their structural design.

A FinFET is a type of field-effect transistor (FET) that has a thin vertical fin instead of being completely planar. The gate is fully “wrapped” around the channel on three sides formed between the source and the drain.

The paper introduces the formation, development, and future exploration of FinFET. It introduces the invention history, the formation and working principle of conventional bulk FinFET with three gates. The current technological level of FinFET is also subsequently shown with TBG JL FinFET.

FinFET has clearer long term scalability. UTBSOI may be ready sooner than FinFET for some companies. UTBSOI has a good back-gate bias option. FinFET will be used at 22nm by Intel and later by more firms to <10nm. Some firms may use UTBSOI to …

There is one source and one drain contact as well as a gate to control the current flow. In contrast to planar MOSFETs the channel between source and drain is build as a three dimensional bar on top of the silicon substrate, called fin.

FinFET / Multiple Gate (MUG) FET Sidewalls (FinFET) and also tops (trigate) become active channel width/length, thus more than one surface of an active region of silicon has gate, eg: sides and top, vs one surface for planar structures. • State of the art fin W is 20-60nm, fin/gate height 50-100nm, gate length ~30nm • lower parasitic ...

Nov 19, 2020 · As compared to prior planar transistors, the fin, contacted on three sides by the gate, provides much better control of the channel formed within the fin. But, finFETs are already reaching the end of their utility as challenges mount at the 5- and 3-nm nodes.