In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.

Mar 19, 2025 · CVD Equipment Corporation provides precise and reliable chemical vapor deposition and thermal process equipment – enabling tomorrow’s technologies™ in silicon carbide, energy storage, aerospace and defense, and other applications.

Mar 1, 2025 · In this paper, we perform the simulation of the flow field of a CVD rectangular chamber to explore the influence of gas distribution to the uniformity of Si epitaxy. The gas flow ratio is effective in tuning the thickness profile from a W shape to an M shape.

CVD is film growth from vapor/gas phase via chemical reactions in gas and at substrate: Transport-limited CVD. Chamber design, gas dynamics control film growth. Non uniform film growth. λ/L = N K >> 1. How can you select process parameters to get desired product and growth characteristics? “Equilibrium constant”, K (cf. Law of mass action)

Chemical vapor deposition (CVD) is a process used to produce high-purity nanomaterials of various types. Typical CVD consists of two steps: (1) transportation of gas-phase materials into the chamber and gas-phase reaction and (2) the formation/deposition of …

The first step in the actual CVD process is the controlled introduction of the precursors and any required diluent gases into the reaction chamber; this introduction is depicted on the left side of the chamber in Figure 1.

Aug 7, 2015 · CVD Equipment Corporation’s UHVCVD System is an automatically controlled research unit designed for the processing of single or batch wafers with diameters up to 200 mm at temperatures up to 900 °C or above. The system consists of a …

Jun 19, 2015 · Professor Karen Gleason explains chemical vapor deposition, or CVD, a basic tool of manufacturing — used in everything from sunglasses to potato-chip bags — that is fundamental to the production of much of today’s electronics.

Low-temperature chemical vapor deposition (CVD) is a process whereby a chemical precursor is vaporized and deposited onto the substrate to impart extremely dense, non-line-of-sight coatings. Typical CVD processes are high temperature (>1000°C) which limits compatibility of …

Plasma enhancement options for lower temperature deposition or plasma assisted conversion or functionalization as well as chamber cleaning. PlasmaPro® 100 Nano is a high temperature CVD/PECVD system tailored for high quality deposition of nanostructured materials and Silicon based thin films.