Low barrier diode for detectors up to GHz frequencies; For high-speed applications; Zero bias detector diode; Pb-free (RoHS compliant) package

3 days ago · BAT 63-02V H6327 Infineon Technologies Schottky Diodes & Rectifiers RF DIODE datasheet, inventory, & pricing.

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2 2011-06-15 BAT63... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 3 V IR - - 10 µA Forward voltage IF = 1 mA VF - 190 300 mV Forward voltage matching2) IF = 1 mA ∆ VF - - 20 AC Characteristics

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BAT 63 Semiconductor Group 2 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. DC Characteristics Reverse current VR =3V IR ––10 nA Forward voltage IF =1mA VF – 190 300 mV Diode capacitance VR = 0.2 V, f = 1 MHz CT – 0.65 0.85 pF Case capacitance CC – 0.1 – pF ...

Description: Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies). Manufacturer: Siemens Semiconductor Group.

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