
2N7002P (60 V, 360 mA N-channel Trench MOSFET) - Nexperia
2N7002P - N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2N7002P,215 Nexperia USA Inc. | Discrete Semiconductor …
Order today, ships today. 2N7002P,215 – N-Channel 60 V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB from Nexperia USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
2N7002P,215 Nexperia | Mouser
Apr 15, 2025 · 2N7002P,215 Nexperia MOSFETs 60 V, 360 mA N-channel Trench MOSFET datasheet, inventory, & pricing.
Normalized drain-source on-state resistance factor as a function of junction temperature.
2N7002 onsemi | Discrete Semiconductor Products | DigiKey
Order today, ships today. 2N7002 – N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount SOT-23-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets.
2N7002P Datasheet by Nexperia USA Inc. - Digi-Key Electronics
View 2N7002P by Nexperia USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.
2N7002P Datasheet (PDF) - NXP Semiconductors
Part #: 2N7002P. Download. File Size: 173Kbytes. Page: 16 Pages. Description: 60 V, 0.3 A N-channel Trench MOSFET. Manufacturer: NXP Semiconductors.
2N7002P,215 - Newark Electronics
The 2N7002P,215 is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits. Logic-level compatible; Very fast switching; AEC-Q101 qualified; Applications
2N7002P 60 V, 360 mA N-channel Trench MOSFET 23 November 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching
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