The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors.

Multi‐gate MOSFET structures can achieve superior electrostatic integrity than the conventional planar bulk MOSFET structure and hence offer a pathway to lower VDD, reduce V TH variability, and extend transistor scaling.

Nov 24, 2020 · The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without increasing the device area, thereby reducing the specific channel resistance.

Apr 5, 2012 · The FinFET includes a spacer at the top of the fin and is considered a dual-gated device with a gate on two sides of the channel. The Tri-Gate FET, on the other hand, is gated on three sides of the channel and hence the name “Tri-Gate.”

Nov 16, 2011 · Figure 5 shows several examples of multigate devices, namely fin field-effect transistors (FinFETS), triple-gate (tri-gate) MOSFETS, gate-all-around MOSFETS (in which the gate electrode...

Oct 27, 2022 · This study discusses the numerous suggested TFET architectures, such as Heterojunction TFET, Double Gate TFET, Tri-Gate TFET, and Single Gate TFET, and their performance. Today’s generation of the technological world needs low-power application devices and low-cost transistors.

Jun 7, 2016 · The basis for the implementation of the variation-robust tri-gate bulk MOSFET is (i) superior gate controllability and (ii) higher gate oxide capacitance of the tri-gate bulk MOSFET (compared the planar bulk MOSFET).

Abstract: The multi-gate transistors such as Fin-FETs, Tri-gate FETs, and Gate-all-around (GAA) FETs are remarkable breakthrough in the electronic industry. 3D Transistor is taking the place of the conventional 2D planar transistor for many reasons. 3D transistors afford more scalability, energy efficient performance than planar transistors and ...

The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain channel, called a "fin," instead of residing on top of the channel in the traditional 2D planar...

This paper reports detailed analysis on switching dynamics and device variability over a wide range of temperatures for deeply scaled (40nm gate length) tri-gate ferroelectric FETs with 10nm HZO fabricated using gate first process on SOI wafers.