Aug 5, 2017 · Optimal concentration of MPS on TSV filling by the copper electrodeposition is studied. The quality of TSV filling under ultrasonic electroplating has improved by 23%.

Apr 19, 2017 · In this study, we demonstrate the TSV dynamic filling process through staged electrodeposition experiments at different current densities. The optimum current density to achieve defect-free...

Jan 24, 2014 · In this paper, we report through-silicon via (TSV) Cu filling failure modes and categorize them into three major regions based on their causes. First, Si etch-related region for the TSV defining.

Mar 6, 2014 · In this study, the copper plating of TSVs with the diameter and the depth in the ranges of 2.5-30 μm and 50-300 μm, respectively, was investigated. A nearly 100% bottom up plating recipe was developed in order to achieve void-free and seamless filling.

Jul 1, 2020 · Coaxial-like transmission structure provides a low-cost solution of shielding TSV for high frequency application. Impedance matching needs coaxial-like TSVs to usually have different diameters. This paper presents an optimized through-via bottom-up filling method, which enables simultaneously copper filling TSVs with different aspect ratios.

Through silicon via (TSV) can be customized to fit different design specifications, from dimensions to materials to the location of the vias. This paper gives a comprehensive summary of the TSV fabrication steps, including etch, insulation, and metallization process.

In this study, the filling process of high aspect ratio through-silicon-vias (TSVs) under dense conditions using the electroplating method was efficiently achieved and optimized. Pulsed power was used as the experimental power source and the electroplating solution was prepared with various additive concentrations.

Dec 1, 2024 · Through-silicon via (TSV) technology realizes high-density interconnections within and between different dies (chips) by vertically drilling holes in silicon and filling them with various conductive materials.

Aug 12, 2019 · Organic levelers have been essential additives for Cu electrodeposition to achieve defect-free filling of through-silicon vias (TSVs). They selectively inhibit Cu deposition on top of TSVs, avoiding the occlusion of TSV openings and concentrating Cu deposition inside the TSVs.

Abstract: A novel, simple, low-cost method for the void-free filling of high aspect ratio (HAR) through-silicon-vias (TSVs) is presented. For the first-time pure indium, a type-I superconductor metal, is used to fill HAR vias, 300 to 500 μm in depth and 50 to 100 μm in diameter.