Aug 1, 2022 · Using atomic resolution imaging and spectroscopy, we demonstrate near-ideal vdW interfaces without chemical interactions between the 2D TMDs and 3D metals.

Jan 29, 2021 · We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature...

Transition-metal dichalcogenide (TMD or TMDC) monolayers are atomically thin semiconductors of the type MX 2, with M a transition-metal atom (Mo, W, etc.) and X a chalcogen atom (S, Se, or Te). One layer of M atoms is sandwiched between two layers of X atoms.

Apr 11, 2019 · Transition metal dichalcogenides (TMDs), such as MoS, MoSe, MoTe, WS, WSe, etc., have been considered as the most promising candidates for energy-efficient information processing at ultrascaled devices due to their decent energy gap of around 1-2 eV and single-atomic thickness.

FET-based biosensors have been extensively investigated to detect a range of target biomolecules due to their superior sensitivity, swift label-free detection capabilities, low power consumption, compatibility with CMOS technology, and large scale production at a low cost.

May 9, 2024 · Here, we demonstrate robust mono- and bilayer WSe 2 FETs with highly controllable and stable doping by integrating oxidation-induced WO x charge-transfer dopants on the top and bottom surfaces of WSe 2 on demand.

Oct 21, 2022 · Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface.

2D-Electrostrictive Field Effect Transistor (2D-EFET) is a recently proposed steep switching device (<60mV/dec) that operates on the principle of dynamic bandgap (E G) modulation of 2D TMD channel, comprising of MoS 2 /WSe 2. 2D-EFET consists of a piezoelectric/electrostrictive material (PZT/PMN-PT) between its gate (G) and back terminal (B).

Jan 11, 2017 · In this paper, we present a compact model for surface potential and drain current in transition metal dichalcogenide (TMD) channel material-based n-type and p-type FETs. The model considers 2-D density of states and Fermi-Dirac statistics along with drift-diffusion transport model and includes velocity saturation and trap state effects.

Using electrical characteristics from three-terminal field-effect transistors (FETs), we demonstrate substantial strain induced band gap tunability in transition metal dichalcogenides (TMDs) in line with theoretical predictions and optical experiments.