Photoluminescence studies of Si/SiO - ScienceDirect
Sep 1, 2009 · Photoluminescence (PL) properties of Si nanoparticles (Si-np) produced by irradiating the Si wafer with nanosecond laser pulses at 532, 683 and 1064 nm are studied. Si …
Nearly perfect near-infrared luminescence efficiency of Si
Aug 2, 2019 · Silicon nanocrystals (SiNC) embedded in silicon dioxide (SiO 2) have been shown to provide high photoluminescence (PL) quantum yield (QY) of the order of 20% which is size …
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Application of Various Microscopy Techniques to Investigating …
This article shows how confocal Raman imaging, confocal PL imaging, laser-scribing and AFM in a single microscopy system was performed on a crystalline Si sample. The same electronics …
Luminescence of SiO2 layers on silicon at various types of excitation ...
Sep 1, 2018 · We present a comparative analysis of Cathodoluminescence (CL), Photoluminescence (PL) and Electroluminescence (EL) spectra measured on Si-SiO2 …
Silicon photoluminescence (PL) spectrum corresponding to the ...
Reducing these thermalization losses and enabling better sensitivity to light is possible by sensitizing the silicon solar cell using singlet exciton fission, in which two excited states w......
Comparison of Outdoor and Indoor PL and EL Images in Si
Jun 23, 2023 · In this paper, we present a detailed characterization of both damaged mono- and multi-crystalline silicon solar cells using dEL and dPL, comparing the results provided by these …
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Raman and Photoluminescence Spectroscopy Measurements
Confocal Raman and Photoluminescence (PL) imaging are useful tools for quality assurance to investigate stress and stress induced artifacts in Si of semiconductor devices.