Jan 7, 2020 · Especially, SiF 3 ion implantation can reduce the leakage current of MTM anti-fuse cells by two orders of magnitude, which is mainly attributed to a-Si conductive band being greatly elevated by strong negative F ions, and it results in the increase of the potential barrier of a-Si/metal interface.

The invention belongs to programmable antifuse technical fields, are related to a kind of programmed method suitable for MTM antifuse PROM.

The non-crystallization degree of the antifuse is greatly improved, and the breakdown consistency of the dielectric layers of the antifuse is improved. The invention relates to a preparation method...

The invention relates to an MTM antifuse unit structure preparation method, comprising the steps of: (1) depositing a first intermetallic medium material and a lower layer metal material; (2)...

Dec 1, 2019 · The majority of configuration cells for radiation hardened programmable logic devices are categorized as four types: static random access memory (SRAM) [1], oxide-nitride-oxide (ONO) anti-fuse cells [2], metal to metal (MTM) anti-fuse cells [3], …

Jan 1, 2007 · The total dose effects of the ONO and MTM antifuse FPGA are compared. The threshold of The ONO antifuse 0.6 μm technology A1280XL is 33.2 Gy (Si) under no biased. However, the total ionizing dose...

Jan 7, 2020 · The α-Si:H antifuse is very promising for high-speed and high-density FPGA. A newly developed antifuse with the structure of Al/α-Si:H, N/α-Si:H/Al was prepared by surface treatment with ...

The invention relates to an MTM antifuse unit structure preparation method, comprising the steps of: (1) depositing a first intermetallic medium material and a lower layer metal material; (2) depositing a first barrier layer material; (3) depositing an electric leakage separating layer; (4) etching the electric leakage separating layer; (5 ...

The novel MTM anti-fuse medium technology is adopted, the programming current of the anti-fuse unit is remarkably reduced, the layout area of the anti-fuse storage unit Bitcell is reduced, and the integration level of the anti-fuse storage unit is improved by more than 10 times.

The structure of MTM(metal-to-metal)amorphous silicon antifuse which has been extensively used in FPGA and PROM product is introduced.On-state resistances which determine the delay of FPGA and PROM have been measured, and the fact that the on-state resistance is inversely proportional to the programming current has been present.The electro ...