Apr 1, 2003 · DC current gain, β dc, vs. base–emitter voltage for the InAs BJT (control), and InAsP/InAs HBT structures. Improvement in gain of the HBT over the BJT is achieved by the addition of phosphorus into the emitter to create the wider band gap InAsP ternary.

Oct 1, 2015 · The second type of HBT is called double hetero junction transistor (DHBT) which has hetero junctions at both E–B and C–B interfaces. In SHBTs the emitter region has a wide energy band gap than the base and is typically fabricated using precise growth technologies such as MOCVD or MBE.

Nov 24, 2021 · We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic nanowire waveguide.

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Index Terms—Heterojunction bipolar transistor (HBT), lattice matched, metamorphic growth. I. INTRODUCTION I nP–based double heterojunction bipolar transistors (DHBTs) have been aggressively pursued because of their superior material transport properties over SiGe and GaAs [1]. This is demonstrated by the increased value of

The common emitter current gain of a control BJT device was measured at β=110, and the HBT device, of identical doping structure achieved β=180. Two advances in InAs-based bipolar transistor technology are reported.

May 1, 2002 · An InP-based integrated HBT amplifier with PNP active load was demonstrated for the first time using complementary HBT technology (CRBT).

Apr 28, 2002 · Initial results from InAsP/InAs HBTs grown on InAs and transferred to sapphire substrates show comparable performance to the well established InGaAs/InAlAs HBT.

Apr 1, 2003 · In addition to metamorphic InAs BJT devices, HBTs, using InAsP for the wide-band gap emitter, are reported. Traditional HBT design stipulates that the emitter be a direct gap, type-I heterojunction which is lattice-matched to the substrate.

InP HBTs offer high radio frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin film wiring permits the realization of compact and complex THz monolithic integrated circuits (TMICs).