The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0…
Dec 1, 2021 · The X-ray photoelectron spectra (XPS) were measured using a SPECS spectrometer with a PHOIBOS-150-MCD-9 analyzer and a FOCUS-500 monochromator (Al K α radiation, hν = 1486.74 eV, 200 W).
Hafnium | XPS Periodic Table | Thermo Fisher Scientific - US
Hafnium electron configuration, X-ray photoelectron spectra, and other elemental information – part of the XPS Reference Table of Elements.
Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for …
Apr 22, 2021 · In this regard, the present work demonstrates the possibility of direct growth of o-phase in Zr doped HfO 2 (Hf 0.5 Zr 0.5 O 2: HZO) on Si substrate, with finer crystallites using PLD technique.
Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 …
Oct 5, 2020 · To investigate the different amount of oxygen vacancies, the x-ray photoelectron spectroscopy (XPS) was conducted for the measurement of binding energy in both HZO films. The thermo K-alpha XPS was used with a beam spot size of 250 μ …
Hf4f (a), Zr3d (b) and O1s (c) XPS of HZO and HZLO
Hf4f and Zr3d XPS of the initial HZO and HZLO samples can be well approximated by single doublets (Fig. 2).
Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Direct and ...
Feb 27, 2023 · Hf 0.5 Zr 0.5 O 2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
X-ray Photoelectron Spectroscopy (XPS) Reference Pages
X-ray photoelectron spectroscopy (XPS or ESCA) curve fitting procedures, reference materials and useful notes are listed here to provide a starting point for the consistent interpretation of XPS spectra.
XPS spectra of HZO layers (14 or 22 nm) recorded in four
In this work, we study the structural and electrical properties of Hafnium Zirconium Oxide (HZO) thin films deposited by Hf0.5Zr0.5O2 single-target sputtering to fabricate a TiN/ (14-/22...
High polarization and wake-up free ferroelectric ... - IOPscience
Dec 3, 2021 · W/HZO/IrO x devices show high remnant polarization (2 Pr) ∼ 53 μ C cm −2, wake-up free endurance cycling characteristics, low leakage current with demonstration of low annealing temperature requirement as low as 350 °C, valuable for back-end-of-line integration.
Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
Feb 11, 2020 · Ferroelectric hafnia-based thin films are promising candidates for emerging high-density embedded nonvolatile memory technologies, thanks to their compatibility with silicon technology and the possibility of 3D integration.