Abstract — We report three-stage monolithic amplifiers for the 140-220 GHz frequency band. Two designs have been fabricated in an InAlAs/InGaAs transferred-substrate HBT technology. The first design exhibited a small-signal gain of. 8.5 dB at 195 GHz.
Measrued MAG/MSG as a function of frequency for three
A fully monolithic 2times2 (2 a-band, 2 g-band) power amplifier based upon SiGe HBT process is developed for the dual band MIMO 802.11n WLAN system.
Abstract In this paper, we present 3.5 GHz HBT power cell device by using WIN’s 5th generation HBT process and flip-chip bump technology. Small-signal and large-signal characterizations are investigated and analyzed through the measured results within different thickness of …
Agilent-HBT Model Extraction - Department of Electrical and …
The following sections describe the general extraction methods of the Agilent-HBT model adopted in the toolkit. The forward DC Gummel data is initially used to extract and optimize the forward saturation currents (IS, ISH, ISE) and forward ideality factors (NF, NH, NE).
HBT current gain (H21), maximum stable power gain (MSG
HBT current gain (H21), maximum stable power gain (MSG) and unilateral power gain (U), measured in the DC-45 GHz and 140-220 GHz bands. [...] We report a single-stage tuned amplifier that...
Small-signal behavioral-level modeling of InP HBT based
Nov 1, 2023 · InP heterostructure bipolar transistors (HBTs) have demonstrated advanced threshold control, high intrinsic transconductance and easy integration with dense multilevel thin-film wiring, which are excellent candidates for microwave and millimeter wave integrated circuits (MMICs) applications [7], [8].
GaAs heterojunction bipolar transistor (HBT) based amplifiers are proven to have high efficiency, good linearity, ruggedness, and low cost. In this paper we report on an improved linearity GaAs HBT device achieved through a novel engineered Ft curve. The novelty of the solution relies on the flatness of the Ft curve with device current density.
Abstract — We report a single-stage tuned amplifier that exhibits a peak small signal gain of 6.3 dB at 175 GHz. The amplifier was designed in a transferred-substrate InP-based HBT technology that has exhibited record values of extrapolated fmax.
We report the measurement of submicron transferred-substrate InGaAs/InAlAs heterojunction bipolar transistors (HBTs) in the 140-220 GHz frequency band. We believe this is the first reported characterization of HBTs above 110 GHz.
Design considerations of ballast resistors for SiGe power HBTs at these two frequencies are investigated for both good thermal stability and high RF power performance.