In this study, we have further evaluated and characterized ALD HfO2 and Al2O3 films as MIM capacitor dielectric for GaAs HBT technology, and compared the results to those of PECVD Si3N4. The ALD Al2O3 and HfO2 films were deposited using a …
Characterization was performed on the application of atomic layer deposition (ALD) of hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (Si3N4) as metal–insulator–metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology.
Fabrication of MIM capacitors with 1000 - ScienceDirect
Jun 1, 2005 · In this study, we fabricated the excellent MIM capacitors of 1000 Å silicon nitride with high breakdown electric field for InGaP/GaAs HBT applications. Their breakdown electric field and capacitance were about 7.3 MV/cm and 620.565 pF/mm 2 respectively.
Design and process related MIM cap reliability improvement
Dec 1, 2015 · Layer-by-layer analysis of the CAD layout of circuits containing shorted capacitors was performed in parallel with scrutiny of the HBT MMIC process. This analysis uncovered design features common to the majority of failed capacitors.
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT …
May 3, 2013 · Hafnium dioxide (HfO 2) and aluminum oxide (Al 2 O 3) films have been deposited using atomic layer deposition (ALD) method and have been evaluated and used as metal-insulator-metal (MIM) capacitor dielectric in GaAs hetero …
Effects of Deposition Method of PECVD Silicon Nitride as MIM …
Apr 25, 2011 · Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metal-insulator-metal (MIM) capacitor dielectric for GaAs hetero-junction bipolar transistor (HBT) technology.
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT …
One of the methods to reduce the design and die size is to increase the capacitance density and/or reducing the area of the metal-insulator-metal (MIM) capacitor, which is a key passive component in GaAs applications.
In search of higher density mim capacitor for GaAs RF
Jan 1, 2005 · Investigation and characterization have been performed on methods of obtaining higher density MIM capacitors for GaAs RF power applications in order to reduce die size.
GaAs MMICs (monolithic microwave integrated circuits) are widely used in RF modules for portable devices in recent years. In particular, HBT PAs (hetero-junction bipolar transistor power amplifiers) play a key component for 3G/4G LTE and wifi commercial applications.
FIB/SEM image of MIM capacitor on GaAs HBT wafer with
Download scientific diagram | FIB/SEM image of MIM capacitor on GaAs HBT wafer with 600 Å multi-layer PECVD Si 3 N 4 as capacitor dielectric. from publication: Effects of Deposition Method of...