Advances in self-aligned SiGe HBT structures associated with a thin base have significantly raised cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ to more than …

PNPs and FETs are main attraction of Si and SiGe technologies → Increased PA functionality. The Si and SiGe technologies have a higher thermal conductivity than the GaAs technology → …

Aug 1, 2022 · In this work, we report an In 0.3 Ga 0.7 As HBT device on a 200 mm GeSi wafer (as the virtual substrate) and graded buffer layer technique. This will serve as one of the critical …

Oct 10, 2018 · Today, SiGe heterojunction bipolar transistors (HBT) in BiCMOS technology environment are widely used for applications like automotive radar, high-speed wireless and …

SOI SiGe HBT作为 BiCMOS工艺的核心器件, 其频率特性决定了电路所能达到的工作速度. 为此, 本文针对所提出的SOI SiGe HBT 器件结构, 重点研究了该器件的频率特性, 并通过所建立的集电 …

Tower Semiconductor offers high performance SiGe BiCMOS technologies optimized for tomorrow’s high-frequency wireless communications and high-speed networking applications.

Jan 1, 2011 · SiGe HBTs and BiCMOS are promising candidates for both high-speed digital operation and high-frequency analog operation for ICs and LSIs in multigigabit data …

Abstract—We demonstrate multi-emitter Si/Gex Si1 x npn het-erojunction bipolar transistors (HBT’s) which require no base contact for transistor operation. The base current is supplied by …

SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of CMOS-only, SiGe-HBT-only, SiGe BiCMOS, and InP-HBT 30 …

Abstract: Radiation-oriented (RO-) and microwave (MW) characterization of the several process technologies - CMOS silicon-on-insulator (SOI) 180 nm process, CMOS 90 nm process, SiGe …