Apr 1, 2021 · The as-grown 2.0 μm-thick Ge film show high quality with a full-width at half-maximums for Ge(004) of 110 arcsec and very smooth surface with a root-mean-square roughness of 0.2 nm. The Ge film achieved in this work is a promising candidate for the fabrication of optoelectronic devices.

industrial X-ray film systems. G is a measure of the signal gain factor and σD indicates the noise, so that G/σd repr. nnual audit at the Agfa plant. The results are recorded in .

Apr 15, 2021 · In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate...

Sep 20, 2013 · The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD) of ∼10 7 /cm 2 and the root-mean-square (RMS) roughness of ∼ 0.75 nm.

Mar 1, 2016 · An epitaxial Ge film was grown on a Si (001) substrate via a two-step process through the molecular beam epitaxy technique. The strain status of non-annealed and annealed epitaxial Ge films was determined by X-ray diffraction, Raman spectroscopy, and a combination of high-resolution transmission electron microscopy and geometric phase analysis.

Dec 12, 2023 · This approach provides an inexpensive and convenient way for accurate Ge substrate thinning in applications such as multijunction solar cells and sub-10 μm-thick Ge thin film preparation, which enables future studies of low-defect density Ge-based devices such as photodetectors, LEDs, and lasers.

Nov 13, 2018 · In this work, we present a new approach of creating tensilely strained intrinsic Ge films on Si substrates through physical vapor deposition of solid Ge sources. Compared to the toxic Ge...

Mar 26, 2020 · Germanium on silicon has the potential to enable growth of high quality group IV semiconductors for the field of silicon photonics by being used as virtual buffers. In addition Ge layers can be used in the fabrication of passive components such as waveguides and resonators.

Sep 1, 2022 · Direct deposition of high-quality Ge film on Si substrate suitable for fabricating Ge/Si photodiodes was achieved by using plasma-enhanced chemical vapor deposition (PECVD) with GeCl4/H2 as...

May 20, 2016 · We investigate the microstructure and optical properties of Ge films on Si substrates prepared at low temperature by DC magnetron sputtering and the effect of in situ annealing on them. With increasing growth temperature, Ge films undergo a transition from amorphous to microcrystalline, then to polycrystalline.