In this study, molybdenum diselenide (MoSe 2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using …

FBH’s latest 3” wafer-level process enables lithographic access to both the HBT’s front-side and back-side, aligned to each other. The resulting linear device (shown in Figure 1) eliminates dominant transistor parasitics and relaxes design trade-offs.

We have been working on high-performance heterojunction bipolar transistors (HBT) using III-V compound semiconductors. The HBT high-frequency performance parameters include current gain cut-off frequency (f T) and maximum oscillation frequency (f max), which can be used to estimate the IC operating frequency.

Oct 8, 2024 · Using the C-FIB, we can locally activate two types of single-photon emitters in high-purity silicon with a resolution better than 250 nm $250 \, \mathrm{nm}$. One type of emitter, the W center consisting of three interstitial Si atoms, is generated in the as-grown wafer.

May 29, 2020 · This article compares the Ga FIB/SEM, Xe plasma FIB/SEM and the Helium Ion Microscope (HIM) and describes how these instruments excel at specific applications based on their ion solid interactions and setup.

Sep 3, 2009 · FIB/SEM image of the GaAs HBT, showing void below the re-entrant profile structures of the collector trench when polyimide is used as an interlevel dielectric.

Aug 1, 2024 · FIB instruments employ a finely focused beam of ions with an energy of typically 2-30 keV that is scanned across a sample to effect modifications down to the nanometer scale.

Focused ion beam (FIB) systems are capable of localized (on a scale of micrometers) removal ("cutting") and deposition ("pasting") of materials. Focused Ion Beam Cut and/or Paste refers specifically to the use of the FIB system for tasks such as 1.)

Mar 1, 2022 · The aim is to extend FIB-o-mat such that the tools can be used with microscopes of any manufacturer, covering ion beam machining with a variety of ions. In addition, the toolbox can be used for any type of two-dimensional parametric modeling, …

FIB images of GaAs HBT area with (a) polyimide and (b) PBO as interlevel dielectric, and both with PBO as buffer layer. ... in this study we have shown that this PBO layer is well-suited to be...