Tungsten CVD, used for forming conductive contacts, vias, and plugs on a semiconductor device, [19] is achieved from tungsten hexafluoride (WF 6), which may be deposited in two ways: WF 6 → W + 3 F 2 WF 6 + 3 H 2 → W + 6 HF. Other metals, notably aluminium and copper, can be deposited by CVD.

May 21, 2020 · As mentioned above, the developed thick CVD-W coatings show excellent performance under fusion-relevant conditions, which means CVD-W could be considered as a candidate PFM for the present tokamaks and future fusion reactors.

This paper highlights two new low resistivity W liner films which replace both TiN and the nucleation layer and that allow for continued low resistance scaling of W fill: a plasma-enhanced CVD W (PECVD W) film that adheres to dielectrics and a …

In the semiconductor industry CVD tungsten has found a very particular niche because of its properties and its ability to deposit uniformly over patterned substrates. It’s most common application has been and continues to be the filling of vias between metallisation levels and contacts windows to device silicon.

Dec 1, 2017 · Chemical vapor deposited (CVD) high-purity tungsten can be manufactured as electron emitters in thermionic fuel elements. Exposed surface planes of the emitter emit electrons and affect the efficiency and load capacity of the thermionic fuel element.

Aug 16, 2004 · Tungsten (W) thin film as a nucleation layer for a W plug-fill process was deposited using a modified chemical vapor deposition (CVD) called pulsed CVD, and properties of the films were investigated.

Tungsten-to-silicon ohmic contacts are fabricated using CVD- deposited tungsten and diffusion-doped silicon. Investigated doping range is 2 x 10"^ - 10^ cm ^ for p-silicon (boron dopant) and 4 x 10"*"^ - 5 x 10^ cm ^ for n-silicon (phosphorus dopant). Contact resistivities obtained range from 3.5 x 10 ~ 3.2 x 10 ^ cm^ for-6 -6 2

Feb 15, 2011 · The characteristics of blanket CVD-W and PVD-W films with and without TiN/Ti underlayers have been investigated in terms of both materials properties such as resistance, stress, morphology, crystallinity, and composition, and prospective applications such as for DRAM bit line interconnections.

Process engineers deposit tungsten in single-wafer cold-wall LPCVD reactors. The process gas is generally tungsten hexafluoride, but can be tungsten hexachloride. They use temperatures ranging from 300 to 450°C, depending on the process. The gas lines in the CVD system must be heated to prevent condensation. There are three possible deposition ...

Aug 25, 1994 · Chemical Vapor Deposition (CVD) In Situ Catalysis of Tungsten Deposition. Laser-Assisted Chemical Vapor Deposition (LCVD) Plasma-Enhanced Chemical Vapor Deposition (PECVD) Summary and Outlook