Abstract: This paper describes an advanced 5nm node back-end-of-line (BEOL) process integration based on an extreme ultraviolet (EUV) lithography process, atomic layer deposition (ALD) barrier metal (BM) and Cu reflow process. The ALD BM technology was integrated into Low-k in the damascene metallization.

Back end of the line or back end of line (BEOL) is a process in semiconductor device fabrication that consists of depositing metal interconnect layers onto a wafer already patterned with devices. It is the second part of IC fabrication, after front end of line (FEOL).

Feb 23, 2017 · Modelling suggest thinning or scaling the DB to 5 nm NDC thickness provides 7% keff reduction, which is more than one generation of low k dielectric progress. Can DB/ESL continue to scale with all the DB/ESL requirements and increasing complex patterning? How far can Cu extend? And what replaces Cu? How to compensate?

May 31, 2024 · BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance Abstract: In this letter, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 5 nm HZO utilizing Molybdenum (Mo) as the electrodes.

This paper presents a minimum pitch single patterning process for 5nm node back-end-of-line (BEOL) integration based on extreme ultraviolet (EUV) lithography with quasar illumination and optical proximity correction (OPC).

Jul 6, 2021 · Overall chip results show that the 3-nm NSFET outperforms the 5-nm FinFET by $-$ 27.4% in power, $-$ 25.8% in total wirelength, $-$ 8.5% in the number of cells, $-$ 47.6% in area, and 34.7%...

Jul 11, 2017 · Imec’s annual Technology Forum kicked off today in connection with SEMICON West with two announcements focused on how 2D materials can be used to scale FETs for very advanced technology nodes and...

Jun 25, 2022 · From their Apple A15 Reverse Costing Sample, there are 2 crucial Scanning Electron Microscopy (SEM) images with scale bars that show logic transistors. We measure an average standard cell height of 210nm and average CGP of 51nm.

Feb 8, 2020 · The downscaling of device dimensions below the 5nm technology node is becoming increasingly challenging. This is mainly due to electrostatic and variability limitations in the front-end-of-line, and to routing congestion and a dramatic RC …

In this paper we present the concept of the Fully Self Aligned Via (FSAV) with motivation of achieving manufacturable litho process windows for patterning vias in 5nm-node interconnects. A process flow is proposed for FSAV which includes metal …