Nov 12, 2024 · A rotary spatial atomic layer deposition (RS-ALD) method is proposed for the preparation of high-quality Al 2 O 3 thin films and its application to the edge passivation of tunnel-oxide passivated contact (TOPCon) half solar cells.

Jan 1, 2002 · Atomic layer deposition (ALD) of ultrathin high-K dielectric films has recently penetrated research and development lines of several major memory and logic manufacturers due to the promise of unprecedented control of thickness, uniformity, quality and material properties.

Jan 1, 2025 · As a result, this study studies the RS-ALD-based approach for preparing Al 2 O 3 thin films and applying it to edge passivation of TOPCon cells. RS-ALD offers several advantages over conventional ALD, the first of which is its high deposition rate.

The ALD 150 LX incorporates various reactor design features for advanced, single wafer R&D including remote plasma, real time ellipsometry, and cluster tool integration capabilities. These enhanced features present design challenges that must be overcome to optimize performance, and to minimize reactor downtime.

Jan 1, 2014 · Atomic layer deposition (ALD) is a thin-film growth technology that is capable of depositing conformal, pinhole-free, and uniform films on high-aspect-ratio surfaces with atomic precision.

Mar 8, 2024 · In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS2-MoSe2 lateral superlattice as a pre-defining template.

Jan 10, 2019 · Spatial ALD (SALD) is a variation of ALD in which precursors are continuously supplied in different locations and kept apart by an inert gas region or zone. Film growth is achieved by exposing the substrate to the locations containing the different precursors.

作为专业从事高效太阳能电池工艺设备和生产线的研发、生产和销售的高新技术企业，杭州众能光电具备包括ALD（原子层沉积）、狭缝涂布、磁控溅射、真空蒸镀等工艺设备的设计制造。 ALD作为其中关键工艺装备，其独特的低温沉积方式能够制备高质均匀稳定的钝化、光伏活性层等关键薄膜，对于提升电池组件的光电性能有着重要的作用。 针对这种先进的沉积工艺，目前杭州众能光电已经拥有成熟稳定的小型实验级（300mm*300mm）和大型平米级（650mm*1200mm） …

Atomic layer deposition (ALD) is a thin-film growth technology that is capable of depositing conformal, pinhole-free, and uniform films on high-aspect-ratio surfaces with atomic precision. It is similar to chemical vapor deposition (CVD), but compared to CVD, it usually produces thin films with better mechanical, thermal, and electrical properties.

Jul 8, 2021 · The atomic layer deposition (ALD) of Ru using a metal–organic precursor, tricarbonyl (trimethylenemethane)ruthenium [Ru (TMM) (CO) 3] and O 2 as a reactant is reported. The high vapor pressure, thermal stability, and relatively small ligands of …