Using the 5G new radio 100-MHz QPSK signal, this work shows high linear power of 31 dBm with 34% PAE and 30 dBm with 31% PAE at N78 and N77 band, respectively. The corresponding …

HBT PAs have been widely used for 3G/LTE wireless applications. The next 5th generation new radio (5G NR) requires more mobile data, higher speed and higher frequency with wider band …

Abstract: This brief proposes a broadband flat-gain Doherty power amplifier (DPA) for 5G new radio (NR) mobile handsets. It is implemented by the heterogeneous integration of GaAs HBT …

Oct 24, 2019 · This paper presents a comprehensive design of a fully integrated multistage GaAs HBT power amplifier that achieves both linearity and high efficiency within a chip area of 0.855 …

Recent improvements in heterojunction bipolar transistors(HBTs) enable SiGe BiCMOS technology to reach performance of III-V technology. Higher integration capability and lower …

afficiency (PAE) of 34.3 % in the 3.5 GHz band. Additionally, with a 5G NR 64-QAM 100-MHz modulated signal, it achieved a linear output power of 22 dBm with an EVM of 5.6 % and a …

A family of InGaP HBT processes are in production, each tailored to provide an optimum performance (high power and superior linearity) for a unique application in the cellular …

Jun 16, 2024 · We present a broadband parallel-combined compact Doherty power amplifier (PA) in a 28-nm bulk complementary metal–oxide–semiconductor (CMOS) device technology for …

This brief proposes a broadband flat-gain Doherty power amplifier (DPA) for 5G new radio (NR) mobile handsets. It is implemented by the heterogeneous integration of GaAs HBT process for …

Using the 5G new radio 100-MHz QPSK signal, this work shows high linear power of 31 dBm with 34% PAE and 30 dBm with 31% PAE at N78 and N77 band, respectively. The corresponding …