In electronic engineering, a through-silicon via (TSV) or through-chip via is a vertical electrical connection (via) that passes completely through a silicon wafer or die. TSVs are high …

Relying on its 12-layer 3D-TSV technology, Samsung will offer the highest DRAM performance for applications that are data-intensive and extremely high-speed.

Aug 14, 2020 · Yesterday, Samsung Electronics had announced a new 3D IC packaging technology called eXtended-Cube, or “X-Cube”, allowing chip-stacking of SRAM dies on top of …

Oct 7, 2019 · Samsung’s 12-layer DRAM KGSDs (known good stack die) will feature 60,000 TSV holes which is why the manufacturer considers its technology one of the most challenging …

The key TSV processes to be discussed in this paper are TSV formation, thin wafer handling, Cu plating and wafer thinning/CMP to form 3D interconnects. Characterization, advantages and …

Jan 2, 2019 · • Updating the hardware list using TSV & other 3D stacking technologies with focus on GPUs for High Performance Computing (HPC) in addition to MEMS & Sensors for mid / low …

Comparison of Through-Silicon Via (TSV) 3D Technology and Monolithic 3D Technology

Aug 27, 2014 · Samsung Electronic announced that it has started mass producing the industry’s first 64 gigabyte (GB), double data rate-4 (DDR4), registered dual Inline memory modules …

3D is becoming a key technology platform for increase integration, either for heterogeneous integration (like for MEMS and CMOS image sensor) or for increasing the performances (like …

Oct 7, 2019 · Relying on its 12-layer 3D-TSV technology, Samsung will offer the highest DRAM performance for applications that are data-intensive and extremely high-speed.