Jul 16, 2024 · From a nuanced perspective, understanding the specific requirements of your application is essential when choosing between the 2N7000 and BS170. While the 2N7000 excels in energy efficiency, the BS170's higher current capacity can be indispensable for more demanding tasks.

Mar 21, 2025 · The choice between the 2N7000 and BS170 MOSFETs depends on your specific application requirements. If your application demands higher current handling, such as driving motors or amplifying high-power loads, the BS170 is the preferable choice.

I was expecting to find a popular P-Channel counterpart of N-Channel 2N7000 or BS170 in a TO-92 package, that may be in everybody's bins, just like BJT NPN/PNP pairs BC547/557 and BC337/327, but could not find it.

The BS170 has the source and drain leads interchanged. The 2N7002 variant is packaged in a TO-236 surface-mount package. The 2N7000 is an N-channel , enhancement-mode MOSFET used for low-power switching applications.

Understand the main differences between 2N7000 and BS170 MOSFETs and decide which is best for your electronic applications.

Mar 21, 2023 · Both the 2N7000 and BS170 are N-channel enhancement MOSFETs and have the following major features: In addition to having similar features, these semiconductor components DMOS manufactured and are best suited for small current, lower power applications; such as servo control and switching.

Apr 12, 2022 · Both the 2N7000 and the BS170 are TO-92 devices that operate at 60 V. The 2N7000 can switch up to 200 mA. The BS170 can switch 500 mA with a maximum on-resistance of 5 at 10 V Vgs.

Apr 11, 2022 · The 2N7000 and BS170 are two N-channel enhancement-mode MOSFETs with differing lead configurations and current ratings that are utilized for low-power switching applications. Other variations 2N7002, VQ1000J, and VQ1000P are sometimes listed together on the same datasheet.

The MOSFETs BS170 and 2N7000 share a common operating voltage of 60V and are both housed in the TO-92 package. Despite these similarities, there are differences in their current handling abilities: the BS170 manages up to 500mA, while the 2N7000 is designed for 200mA.

The BS170 is an N-channel enhancement mode MOSFET capable of switching 60V. It has a maximum drain current rating of 500mA (continuous) and 1200mA (pulsed), a drain-source resistance of 1.2 ohms, and a maximum power dissipation rating of 830 milliwatts. Due to its similar characteristics, BS170 is often used to replace 2N7000.