
2N5770 PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W C B E TO-92 This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43.
2N5770 Datasheet (PDF) - Fairchild Semiconductor
Part #: 2N5770. Download. File Size: 25Kbytes. Page: 2 Pages. Description: NPN RF Transistor. Manufacturer: Fairchild Semiconductor.
2N5770 onsemi / Fairchild | Mouser - Mouser Electronics
Apr 17, 2025 · 2N5770 onsemi / Fairchild Bipolar Transistors - BJT NPN 15V 50mA HFE/2 datasheet, inventory, & pricing.
2N5770 onsemi | Discrete Semiconductor Products | DigiKey
Order today, ships today. 2N5770 – RF Transistor NPN 15V 50mA 350mW Through Hole TO-92-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
The CP317X-2N5770 is a silicon NPN RF transistor designed for low noise, high frequency ampli er and high output oscillator applications. MECHANICAL SPECIFICATIONS:
2N5770 Datasheet by onsemi - Digi-Key Electronics
View 2N5770 by onsemi datasheet for technical specifications, dimensions and more at DigiKey.
2N5770 PBFREE Central Semiconductor | Mouser - Mouser Electronics
2N5770 PBFREE Central Semiconductor Bipolar Transistors - BJT NPN RF Amp/Osc datasheet, inventory, & pricing.
2N5770 Datasheet by ON Semiconductor | Digi-Key Electronics
View datasheets for 2N5770 by ON Semiconductor and other related components here.
2N5770 datasheet(1/2 Pages) FAIRCHILD | NPN RF Transistor
2N5770 Datasheet(HTML) 1 Page - Fairchild Semiconductor : zoom in zoom out 1 / 2 page. Discrete POWER & Signal. Technologies. NPN RF Transistor. 2N5770. Absolute Maximum Ratings* TA = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2N5770 datasheet - NPN RF Transistor - digchip.com
2N5770 NPN RF Transistor . This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 30 mA range. Sourced from Process 43.
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