Description: POWER TRANSISTORS (10A,150W). Manufacturer: Mospec Semiconductor.

2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications.

PNP Silicon High-Power -60V to -80V, -10A This specification covers the performance requirements for power PNP silicon 2N3791 and 2N3792 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/379.

Order today, ships today. 2N3792 – Bipolar (BJT) Transistor PNP 80 V 10 A 5 W Through Hole TO-3 from Microchip Technology. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

2N3791, 2N3792 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit Collector -Base Cutoff Current V CB = 60 Vdc mAdc2N3791 V CB = 80 Vdc 2N3792 ICBO 5.0 5.0 Emitter -Base Cutoff Current V EB = 7.0 Vdc IEBO 5.0 mAdc ON CHARACTERISTICS (3) Forward -Current Transfer Ratio IC = 1.0 Adc, V CE = 2.0 Vdc 50

2N3792 Document Number 3325 Issue 2 IC = - 200mA IB = 0 IC = - 5A IB = - 0.5A IC = - 5A VCC = - 2V IC = - 10A VCC = - 4V IC = 0 VEB =7V VBE = -1.5V VCE = -80V Tc = 150°C IC = 1A VCE = 2V IC = 3A VCE = 2V IC = 10A VCE = 4V IC = -0.5A VCE = -10V f =1MHz Collector - Emitter Sustaining Voltage Collector - Emitter Saturation Voltage Base Emitter ...

Apr 7, 2025 · 2N3792 PBFREE Central Semiconductor Bipolar Transistors - BJT PNP Power SW datasheet, inventory, & pricing.

2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications.

Description: PNP HIGH POWER SILICON TRANSISTOR. Manufacturer: Microsemi Corporation.

View 2N3791, 2N3792 by Microchip Technology datasheet for technical specifications, dimensions and more at DigiKey.