Chinese Researchers Identify Key Cause of Semiconductor Defects, Paving Way for Advanced GaN Technology
To study these microscopic defects, Professors Yang Xuelin and Shen Bo of Peking University used advanced scanning transmission electron microscopy (STEM) combined with deep-sectioning techniques.
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A revolution in digital storage: terabytes in a grain of sand 📀
Devices that can turn on or off (like a switch) allow data to be stored. A team from the University of Chicago is working on ...
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Research Bits: Feb. 25
On average, 90% of the 4,096 microhole electrodes were intracellularly coupled to neurons on top and were able to record many ...
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China’s breakthrough in 3rd-gen semiconductor could advance military weapons
Chinese researchers have discovered the leading cause of defects in the promising semiconductor material gallium nitride (GaN ...
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New liquid crystal method makes perovskite nanocrystals easier to produce
A research team at POSTECH has developed a new method for making perovskite nanocrystals (PNCs) in a more efficient and uniform way. This breakthrough could help speed up the commercialization of ...
China solves GaN chip defect puzzle, boosting edge in US tech war
Minimising semiconductor flaws will expand China’s price gap with US for advanced chips used in electronic warfare, aerospace ...
Liquid crystal method enables large-scale production of uniform perovskite nanocrystals
A research team at POSTECH has developed a method for synthesizing perovskite nanocrystals (PNCs), a next-generation ...
New form of crystal storage stores terabytes of data per square millimeter
New form of crystal storage stores bits as missing atoms, achieving what may be the highest possible storage density of ...