In today's era, a brand is not only a corporate identifier but also the external manifestation of a company's culture and core values. Throughout its development, SLKOR has consistently regarded brand ...

The use of an anti-parallel Schottky barrier diode (SBD) can improve the performance and reliability of silicon carbide MOSFETs in power conversion applications. In this article, we will showcase ...

This preference enhances the system’s efficiency and reduces thermal stress on components. Within this context, the SiC SBD emerges as an optimal choice for several reasons as explained below. ROHM ...

SiC SBD, Others (SiC JFETs & FETs)), by Application (Automotive & EV/HEV, EV Charging, Industrial Motor/Drive, PV, Energy Storage, Wind Power, UPS, Data Center & Server, Rail Transport ...

The new TRSxxx120Hx Series are 1200V products that use the improved junction-barrier Schottky (JBS) structure [1] of Toshiba’s third-generation 650V SiC SBD. Use of a new metal in the junction ...

For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released ...

TOKYO, June 10, 2024--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier ...

TOKYO, June 10, 2024--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier ...