To reduce in-plane stress during InGaN growth, many research groups from around the world have pursued a number of novel approaches – they involve the likes of porous GaN, InGaN pseudo-substrates ...

A hybrid electroluminescence device achieves room-temperature single-photon emission, advancing quantum technologies with ...

For the first time, researchers have used high-speed laser writing to create lines spaced just 100 nm apart on a glass ...

Gallium-nitride (GaN) power devices are becoming one of the core building blocks in LiDAR sensors thanks to their ultra-fast ...

Into the orange According to the paper, laser emission at orange wavelengths (defined as 590-625 nm) is of key importance in ...

Researchers developed a new optimized printing approach that could enable super-resolution 3D direct laser writing (DLW) of ...

In order to improve the patterning of the build-up film dielectric vias – which will be needed – photo imageable dielectric (PID) materials could replace the laser drilled build-up film via process ...

Necroptosis is the predominant form of neuronal death after ischemic stroke. This study identifies the deubiquitinating ...