TI's space-grade GaN FET gate drivers support the entire voltage range needed to design satellite power systems.
The use of these statistics to predict the formation of a gate-field-induced inversion layer at the oxide-silicon interface in typical depletion-type transistors is found to be unjustified. This is ...
Texas Instruments (TI) has unveiled what it claims is the first family of radiation-hardened and radiation-tolerant half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers for ...
Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...
A new technical paper titled “Low-temperature pressure-assisted liquid-metal printing for β-Ga2O3 thin-film transistors” was ...
The Brighterside of News on MSN3d
New nanoscale transistors use quantum tunneling to achieve high performance and efficiencyAs computing demands grow, driven by artificial intelligence and the internet of things, the need for energy-efficient electronics becomes critical. At the heart of this evolution are transistors, the ...
The Masters field 2025: Player line-up for Augusta National and how golfers qualify for major invite
The top 12 and ties from last year's Masters are allowed to return, as are the top four and ties from the other three majors in 2024, with every winner at a full-field PGA Tour event - the ones ...
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