ASM International remains well-positioned to benefit from multiple cycles of innovation in the semiconductor sector. See why ...

Dutch chip-making equipment supplier ASM International has started local production of tools for U.S. chipmakers in response to the U.S. tariffs backdrop, its Chief Executive said on Wednesday."We ...

M'Saad said being close to chipmakers will help with the development and adoption of ASM's most advanced processes, like Atomic Layer Deposition, where it has so far had little competition.

ASM enjoys a more than 50% market share in atomic layer deposition equipment. Most investment has been done organically, although the firm completed its first two acquisitions in 2022 (LPE and ...

Strategic expansion Hichem M'Saad, CEO of ASM, emphasized Taiwan's critical role in the company's business strategy, citing the nation's position as a central hub in the global semiconductor ...

This year, the industry celebrated a milestone: the 50-year anniversary of Dr. Suntola's groundbreaking work on ALD. To honor this occasion, ASM hosted a special event, 'a legacy of innovation,' on ...

Sager believes that ASM International NV has effectively leveraged its first-mover advantage since 2008 to establish a quasi-monopoly in this space, with the largest portfolio of ALD solutions and ...

Additionally, the adoption of their ALD tools for high-k metal gate applications in DRAM and the resumption of growth in the NAND market, where ASM International improved its share prior to the ...

Chicago, March 19, 2024 (GLOBE NEWSWIRE) -- The ALD equipment market size is estimated to be worth USD 3.9 billion in 2023 and is projected to reach USD 6.2 billion by 2028, at a CAGR of 10.0% ...

ASM International N.V. focuses on both organic and inorganic growth strategies such as product launches, expansions and acquisitions to strengthen its position in the ALD equipment market.

ASM International NV (OTCQX:ASMIY) is the market leader in Atomic Layer Deposition, which is the most advanced technology enabling the transition toward sub-3 nm semiconductors.