Months after she was accused of creating an "inappropriate" atmosphere at the Olympic Village, Luana Alonso has come out to ...

The braggadocious sports bettor who boasted about heckling Olympic champion sprinter Gabby Thomas during a recent event in ...

(Photo Provided) Jeremy Barth received the Ohio 4-H Alumni Award at the recent Ohio 4-H Conference in Columbus. COLUMBUS — The Ohio 4-H Conference welcomed over 1,000 volunteers and teens to ...

Impact Statement: The 4H-SiC avalanche photodiode exhibits high gain in the Geiger mode, making it widely applicable in the field of single photon detection, such as quantum communication, ultraviolet ...

For example, in its 200mm conductive 4H-SiC single crystal substrates, SICC says it has achieved near-zero threading screw dislocation (TSD) and extremely low basal plane dislocation (BPD) densities, ...

Silicon carbide (SiC) is a wide-bandgap semiconductor material utilized in high-power, high-temperature, and high-frequency electronic devices. 4H-SiC substrates have distinct characteristics, ...

Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy ...

[1] S. Yu, M. Kang, T. Liu, D. Xing, A. Salemi, M. H. White, and A. K. Agarwal, “Bias-induced threshold voltage instability and interface trap density extraction of 4H-sic mosfets,” 2019 IEEE 7th ...

68, no. 9, pp. 4577-4581, Sept. 2021, doi: 10.1109/TED.2021.3099455. [4] D. Kim and W. Sung, “Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling ...