Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

The IRFHE4250D features IR’s latest generation silicon and expands the power block packaging platform with a 6x6 PQFN package with exposed top and slim profile for back-side mounting that combined ...

A look at the complex production of the Doctor Who story Underworld, with particular emphasis on the difficulties in achieving the bluescreen virtual studio sets.