Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

Ultra Compact & Travel-Ready: 36% smaller than Apple's 96W charger (60 × 54 × 37.2mm) with foldable plugs. Next-Gen GaN + PFC+LLC Circuit Design: Provides fast, cool, and efficient charging with less ...

The design incorporates three-phase interleaved TP-PFC and FB-LLC stages, implemented using Gen-3 Fast SiC MOSFETs and 4th-generation high-power GaNSafe ICs, respectively. The GaNSafe ICs integrate ...

Offering advanced digital control, GaN and SiC power technologies, and up to 30% lower power losses—ideal for next-generation ...

NAVITAS SEMICONDUCTOR 12 kW power supply unit (PSU) is ‘designed for production’ reference design for hyperscale AI data ...

Detailed price information for Navitas Semiconductor Corp (NVTS-Q) from The Globe and Mail including charting and trades.

This innovation enables designers to convert a two-stage power architecture (AC-DC PFC + DC-DC) into a single-stage AC-DC converter—a major breakthrough in power conversion. In principle, ...

GaN FETs enable: 48 V DC-DC conversion for AI server racks, reducing losses and increasing power density Power factor correction (PFC) stages with peak efficiencies above 99% Smaller, cooler-running ...

Explosions were heard in Tehran early Wednesday as Israeli warplanes pounded Iran’s capital overnight and into Wednesday.