GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates this single-stage power conversion.

Mitsubishi Electric announced that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power ...

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

Navitas Semiconductor has announced the latest breakthrough of the world’s first production-released 650 V bi-directional ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power amplifier module (PAM) for 5G massive MIMO ...

Figure 9 Auxless sensing example for overvoltage protection. Channel 1 (CH1) is Vout and channel 2 (CH2) is Vsw. Source: Texas Instruments A high-level integration with a controller and GaN switch can ...

Dezeen Showroom: Spanish outdoor brand Gandia Blasco and design studio Odosdesign have evolved their quintessentially Mediterranean Ensombra sunshade with add-on seating and side tables. The ...

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