Electronic Products4d
TI claims first space-grade 200-V GaN FET gate driver
TI's space-grade GaN FET gate drivers support the entire voltage range needed to design satellite power systems.
IEEE3d
The silicon insulated-gate field-effect transistor
The use of these statistics to predict the formation of a gate-field-induced inversion layer at the oxide-silicon interface in typical depletion-type transistors is found to be unjustified. This is ...
electronics360.globalspec5d
First rad-hard GaN FET gate drivers enable smaller satellites
Texas Instruments (TI) has unveiled what it claims is the first family of radiation-hardened and radiation-tolerant half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers for ...
EDN6d
A new platform for thermally stable DRAM peripheral transistors
Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...
Material's 'incipient ferroelectricity' could jumpstart fast, low-power electronics
Scientists at Penn State have harnessed a unique property called incipient ferroelectricity to create a new type of computer ...
The Brighterside of News on MSN2d
New nanoscale transistors use quantum tunneling to achieve high performance and efficiency
As computing demands grow, driven by artificial intelligence and the internet of things, the need for energy-efficient electronics becomes critical. At the heart of this evolution are transistors, the ...