Scientists at Penn State have harnessed a unique property called incipient ferroelectricity to create a new type of computer ...
Scientists at Penn State have harnessed a unique property called incipient ferroelectricity to create a new type of computer ...
A technical paper titled “Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET)” ...
Combining ultra-thin molybdenum disulfide with flexible strontium titanate nanomembranes creates advanced materials that can ...
The use of these statistics to predict the formation of a gate-field-induced inversion layer at the oxide-silicon interface in typical depletion-type transistors is found to be unjustified. This is ...
Texas Instruments (TI) has unveiled what it claims is the first family of radiation-hardened and radiation-tolerant half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers for ...
School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing ...
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