Additionally, being non-volatile, SOT-MRAM bit cells achieve lower standby power than SRAMs at high cell density. Next, SOT-MRAM bit cells can potentially be made much smaller than SRAM cells, ...

On top of that, the memory is cost-effective—it uses a small single-transistor bit-cell and requires only two or three additional masking steps. MRAM does have its own peculiarities, though.

MRAM joins other technologies in a race to knock flash off its NVM pedestal. Flash still provides by far the lowest per-bit cost — a barrier to any newcomers — but it has drawbacks such as long ...

MRAM basics — two flavors MRAM uses magnetic polarization to store bits. The state of a bit cell depends on the relationship between two magnetic layers. One of the two magnetic layers — the so-called ...

This article covers some more interesting content from the 2021 IEEE IEDM and the MRAM Forum that followed the IEDM. We look at some papers from the conference covering magnetic random-access ...

A France-US research team's new spin on MRAM technology led to a multi-bit storage paradigm that may rival flash memory storage WASHINGTON D.C., July 22, 2014 -- Interest in magnetic random access ...

Texas Instruments (TI) uses FRAM for code and data storage in its 16-bit MSP430 microcontrollers. However, FRAM doesn’t scale as well as MRAM when it comes to finer geometries, although it’s ...

Magneto-resistive random-access memory (MRAM) offers the potential to provide gigabytes (GBs) of fast, non-volatile storage without the above limits to enable the next generation of satellite ...

MRAM, however, uses magnetic states to store ... direction in the Co2FeSi layer – essentially writing a digital bit of information without using electric current. This approach is more like ...

Imec’s extremely scaled spin-orbit transfer MRAM (SOT-MRAM) devices have achieved record performances of a switching energy below 100 femto-Joule per bit and endurance of more than 10 to the power of ...