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Operating from 48V and delivering 4A, dead-band can be minimised to 120ps, or 140ps for 1A. ISSCC 2022 Paper 14.1 A monolithic GaN-based driver and GaN power HEMT with diode-Emulated GaN technique for ...
GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced that the new Renesas Electronics Corporation's automotive 48V/12V Bidirectional DC/DC Converter is ...
Leveraging TI's LMG3522R030 GaN FET and a TMS320F28003x C2000 real-time MCU, the newly commercialized PSU offers power density of over 95 W/in³ and meets 80 Plus Titanium standards.
Delta uses Transphorm GaN to shrink power system, which enables backup battery integration, in an 80Plus Platinum 800W power supply for data centers.
The PSU, from xFusion, uses gallium nitride chips from GaN Systems to deliver a power density of 100W per cubic inch. The 3kW power supply has a 96 percent efficiency rating under the 80 Plus ...
Using a 48V backplane forces DC-DC designers to use 100V MOSFETs, which have significantly higher FOM values and therefore are inherently less efficient. 100V enhancement mode GaN devices, however, ...
TORRANCE, Calif., Nov. 05, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium ...
Transphorm GaN PQFN devices power TDK's family of PFH 500W modules, delivering a 38% power density increase over silicon-based modules.
Operating from 48V and delivering 4A, dead-band can be minimised to 120ps, or 140ps for 1A. ISSCC 2022 Paper 14.1A monolithic GaN-based driver and GaN power HEMT with diode-Emulated GaN technique for ...
DALLAS, March 1, 2023 /PRNewswire/ -- Texas Instruments (TXN), a leader in high-voltage semiconductor solutions, today announced that LITEON Technology has selected TI's highly integrated gallium ...
The PSU has an input voltage range of 180 to 264 Vac, a standby output voltage of 12 V, and an operating temperature range of -5oC to 45oC. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible ...