Silicon carbide (SiC) is a wide-bandgap semiconductor material utilized in high-power, high-temperature, and high-frequency electronic devices. 4H-SiC substrates have distinct characteristics, ...

Silicon carbide (SiC) is a wide-bandgap semiconductor material utilized in high-power, high-temperature, and high-frequency electronic devices. 4H-SiC substrates have distinct characteristics ...

The Ti ohmic contact to 4H-SiC substrates has been expected to produce a low contact resistivity with thermal stability of their contacts, but it still has a problem of easy oxidation in air even at ...