The device in (a) is representative of a FinFET while (b) is representative of a Tri-Gate FET and (c) is a planar FET device. The FinFET includes a spacer at the top of the fin and is considered a ...

In May 2011, however, semiconductor giant Intel announced its decision to use tri-gate FET devices for its 22-nm technology. This is a clear sign that planar MOSFET scaling is reaching its limits ...

since a solid-state tube was exactly what they were looking for when they developed the FET. Since tubes and FETs are both voltage controllers, it is easy to think of the gate as the grid ...

June 4, 2015 -- Synopsys, Inc. (Nasdaq: SNPS) today announced Intel Custom Foundry's certification of digital and custom implementation tools from the Synopsys Galaxy™ Design Platform for Intel's ...

Intel's Tri-Gate technology is a proprietary 3D transistor technology with the gate surrounding the channel on all three sides of the transistor. It provides designers with dramatic performance, power ...

We may make money when you click on links to our partners. Learn More. Intel’s new Tri-Gate transistor technology should give it the ammunition it needs to stave off a challenge by rival ARM ...

Intel has announced a major innovation in microprocessors this week: the world's first 3D transistors, called Tri-Gate, which will be used in the corporation's next generation of desktop ...