Today’s best-developed version is called “spin-torque transfer,” or STT MRAM. (There’s an older stand-alone technology called “toggle MRAM,” which is not covered here.) The programming current goes ...

Figure 2: (a) Shows the thermal stability of the circular diameter for the novel designed advanced-Quad-interface MTJ developed in this study and the conventional Double-interface MTJ.

The latter uses an effect called “spin-transfer-torque (STT)” to change the magnetization by polarized electrons. Fig. 1 Basic structure of an MTJ when two ferromagnetic (FM) layers are in parallel ...

STT-MRAM technology enjoys low power coupled with low cost due to the ability of the magnetic tunnel junction (MTJ) device to be embedded at the back-end of line (BEOL) interconnect layer of the chip ...

What are Magnetic Tunnel Junctions? Magnetic tunnel junctions (MTJs) are nanoscale devices that consist of two ferromagnetic layers separated by a thin insulating tunnel barrier. The electrical ...